Differential Variable-Gain LNA for UWB System

被引：0

作者：

Chang, Woojin ^{[1
]}

Lee, Sangheung ^{[1
]}

Mun, Jaekyoung ^{[1
]}

Nam, Eunsoo ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, RF Convergence Component Res Team, Taejon 305606, South Korea

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

VGLNA; UWB; SiGe; BiCMOS; MMIC; AMPLIFIER; BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces an 1 similar to 12 GHz differential 2-stage variable-gain low-noise amplifier (VGLNA) using 0.25 mu m SiGe: C BiCMOS commercial process technology for ultra-wideband (UWB) system. The results of the fabricated monolithic microwave integrated circuit (MMIC) amplifier show 18 dB gain with a 3 dB frequency band of 1.3 similar to 11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5 V supply voltage and 55 mW total dc power consumption. The gain-control range (GCR) is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 0.99 mm(2) including all testing pads for RF and dc probes.

引用

页码：377 / 380

页数：4

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