Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

被引：6
|
作者：
Suzuki, Ryota [1 ]
Tadano, Yuriko [1 ]
Tanaka, Masaaki [1 ,2 ]
Ohya, Shinobu [1 ,2 ,3 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Univ Tokyo, Ctr Spintron Res Network, Grad Sch Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[3] Univ Tokyo, Grad Sch Engn, Inst Engn Innovat, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
来源：
AIP ADVANCES | 2020年 / 10卷 / 08期
关键词：
GROWTH;
D O I：
10.1063/5.0002536
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/gamma -Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibility between the Fe-based MTJ and SrTiO3.
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页数：5
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