Te-Based Amorphous Binary OTS Device with Excellent Selector Characteristics for X-point Memory Applications

被引：0
|
作者：
Koo, Yunmo [1 ]
Baek, Kyungjoon [1 ]
Hwang, Hyunsang [1 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang, South Korea
来源：
2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrated binary Ovonic threshold switching (OTS) materials (ZnTe, GeTe, and SiTe) and the composition dependent electrical properties. Among those materials, amorphous SiTe-film deposited at room-temperature (RT) process showed excellent OTS properties such as high off resistance (similar to 20G Omega at 0.2V), low on resistance (< 1kO at 1.2V), high selectivity (similar to 10(6)), extreme SS (< 1mV/dec), fast operating speed (2ns transition after 10ns delay), and good endurance (> 500k cycles). In addition, the origin of the electronic switching of the binary OTS device was examined.
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