Molecular arrangement investigation of copper phthalocyanine grown on hydrogen passivated Si(111) surfaces

被引:10
|
作者
Arbi, I. [1 ]
Ben Hamada, B. [1 ]
Souissi, A. [1 ]
Menzli, S. [1 ]
Ben Azzouz, C. [1 ]
Laribi, A. [1 ]
Akremi, A. [1 ]
Chefi, C. [1 ]
机构
[1] Univ Carthage, Fac Sci Bizerte, Unite Serv Commun Spectrometre Surfaces, Lab Phys Mat, Jarzouna 7021, Bizerte, Tunisia
关键词
Copper-phthalocyanine; Hydrogen passivated Si(111) surfaces; ELECTRONIC-STRUCTURE; THIN-FILMS; SI(100); SPECTROSCOPY; INTERFACE; ENERGY; XPS;
D O I
10.1016/j.apsusc.2014.03.100
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chemical, electronic and structural properties of ultra thin films of copper phthalocyanine (CuPc) grown on hydrogen passivated silicon (1 1 1) surfaces were investigated in situ by X-ray photoelectron spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron diffraction (XPD) and electron diffraction (LEED). The early stages of copper phthalocyanine adsorption (1-2) were characterized by the saturation of surface defects and by a flat lying disposition on the surface. Upon further CuPc coverage, the passivation of Si surfaces resulted in the molecule taking a standing position in films. The molecular packing deduced from these studies appears very close to the one in the bulk ce. phase of CuPc. The work function of the films was found to be decreasing during the growth and was correlated with the molecular orientation. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:396 / 401
页数:6
相关论文
共 50 条
  • [1] Growth of copper phthalocyanine on hydrogen passivated vicinal silicon (111) surfaces
    Suzuki, Y
    Hietschold, M
    Zahn, DRT
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5449 - 5452
  • [2] Band bending in copper phthalocyanine on hydrogen-passivated Si(111)
    Gorgoi, M
    Zahn, DRT
    ORGANIC ELECTRONICS, 2005, 6 (04) : 168 - 174
  • [3] Influence of film thickness on the molecular arrangement of copper phthalocyanine on hydrogen-terminated Si(111)
    Nakamura, M
    Morita, Y
    Tokumoto, H
    APPLIED SURFACE SCIENCE, 1997, 113 : 316 - 321
  • [5] Molecular arrangement of copper phthalocyanine on hydrogen-terminated Si(111): Influence of surface roughness
    Nakamura, M
    Morita, Y
    Mori, Y
    Ishitani, A
    Tokumoto, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 1109 - 1113
  • [6] Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces
    Dürr, M
    Höfer, U
    JOURNAL OF CHEMICAL PHYSICS, 2004, 121 (16): : 8058 - 8067
  • [7] Surface Fermi level position of hydrogen passivated Si(111) surfaces
    Miyazaki, S
    Schafer, J
    Ristein, J
    Ley, L
    APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1247 - 1249
  • [8] Molecular Orientation and Electronic States of Vanadyl Phthalocyanine on Si(111) and Ag(111) Surfaces
    Eguchi, Keitaro
    Takagi, Yasumasa
    Nakagawa, Takeshi
    Yokoyama, Toshihiko
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (44): : 22843 - 22851
  • [9] A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces
    Gardener, J.
    Owen, J. H. G.
    Miki, K.
    Heutz, S.
    SURFACE SCIENCE, 2008, 602 (04) : 843 - 851
  • [10] Molecular orientation and ordering during initial growth of copper phthalocyanine on Si(111)
    Wang, Li
    Qi, Dongchen
    Liu, Lei
    Chen, Shi
    Gao, Xingyu
    Wee, Andrew T. S.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (08): : 3454 - 3458