Effect of symmetry of the electron states of HTSC on the current-voltage characteristics of SIS junctions

被引:2
|
作者
Loiko, SO [1 ]
Fedorov, NK [1 ]
Arseev, PI [1 ]
机构
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.1458489
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The current-voltage (IV) characteristics of SIS junctions are calculated in the framework of a multiband model with an anisotropic effective order parameter of HTSC. The results of calculations show that the shape of the IV characteristic and of the density of electron states changes significantly depending on the parameters of the model. A theoretical explanation is proposed for the experimentally observed s-like behavior of the IV characteristics of SIN and SIS junctions with BSCCO-type superconductors. The dependence of the superconducting peak asymmetry on the mutual arrangement of the bands is analyzed. The difference between the obtained results and the results of one-band models with the s and d symmetries of the order parameter is discussed. (C) 2002 MAIK "Nauka / Interperiodica".
引用
下载
收藏
页码:387 / 394
页数:8
相关论文
共 50 条
  • [1] Effect of symmetry of the electron states of HTSC on the current-voltage characteristics of SIS junctions
    S. O. Loiko
    N. K. Fedorov
    P. I. Arseev
    Journal of Experimental and Theoretical Physics, 2002, 94 : 387 - 394
  • [2] Andreev reflections and experimental current-voltage characteristics of break junctions of polycrystalline HTSC
    Petrov, MI
    Gokhfeld, DM
    Balaev, DA
    Shaihutdinov, KA
    Kümmel, R
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2004, 408 : 620 - 622
  • [3] Density of states and current-voltage characteristics in SIsFS junctions
    Bakurskiy, S., V
    Neilo, A. A.
    Klenov, N., V
    Soloviev, I. I.
    Golubov, A. A.
    Kupriyanov, M. Yu
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2021, 34 (08):
  • [4] Current-voltage characteristics of thin HTSC films
    Vatnik, S.M.
    1600, Publ by Pergamon Press Ltd, Oxford, United Kingdom (01):
  • [5] CURRENT-VOLTAGE CHARACTERISTICS OF THIN HTSC FILMS
    VATNIK, SM
    APPLIED SUPERCONDUCTIVITY, 1993, 1 (7-9) : 1379 - 1394
  • [6] CURRENT-VOLTAGE CHARACTERISTICS OF JOSEPHSON JUNCTIONS
    STEWART, WC
    APPLIED PHYSICS LETTERS, 1968, 12 (08) : 277 - &
  • [7] CURRENT-VOLTAGE CHARACTERISTICS OF JOSEPHSON JUNCTIONS
    LANDA, PS
    TARANKOVA, ND
    RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 353 - 359
  • [8] Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer
    I. A. Devyatov
    M. Yu. Kupriyanov
    Journal of Experimental and Theoretical Physics, 1998, 87 : 375 - 381
  • [9] Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer
    Devyatov, IA
    Kupriyanov, MY
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1998, 87 (02) : 375 - 381
  • [10] Circuit effect on the current-voltage characteristics of ultrasmall tunnel junctions
    Wang, XH
    Chao, KA
    PHYSICAL REVIEW B, 1999, 59 (20) : 13094 - 13101