NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement

被引：8

作者：

Lee, Zhao Chuan ^{[1
]}

Leong, Kam Chew ^{[1
]}

Kong, Zhi Hui ^{[1
]}

Kim, Tony Tae-Hyoung ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2013年 / 60卷 / 09期

关键词：

Half-selected static noise margin (HS-SNM); negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); CMOS; SRAM;

D O I：

10.1109/TCSII.2013.2273731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a negative bias temperature instability (BTI)/positive BTI-aware write-wordline (WWL) voltage control technique for improving degraded cell stability of half-selected cells without extra power consumption. After BTI aging, the proposed lowering WWL voltage recovers the degraded cell stability without scarifying the write margin. Finally, we also present a sample circuit implementation of the proposed WWL voltage control scheme.

引用

页码：602 / 606

页数：5

共 2 条

[1] NBTI/PBTI-Aware Wordline Voltage Control with No Boosted Supply for Stability Improvement of Half-Selected SRAM Cells
Lee, Zhao Chuan
Ho, Kim Ming
Kong, Zhi Hui
Kim, Tony T.
2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2012, : 200 - 203
[2] NBTI-Aware Bit Line Voltage Control with Boosted Supply Voltage for Improvement of 6T SRAM Cell Read Stability
2015 INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD), 2015,

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