Nb Solution within Bi4Ti3O12 Sub-structure in the Intergrowth Bismuth-layered Compound Bi7Ti4NbO21

被引:4
|
作者
Gao Xiang [1 ,3 ]
Wang Xian-Hao [1 ]
Xing Juan-Juan [1 ]
Gu Hui [1 ]
Zhang Fa-Qiang [2 ,3 ]
Li Yong-Xiang [2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
layered-ferroelectrics; solubility; HAADF; sintering mechanism; TITANATE; OXIDES;
D O I
10.3724/SP.J.1077.2013.12716
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In intergrowth bismuth-layered compound Bi7Ti4NbO21, growth defects, such as disordered intergrowth with extra layers of Bi4Ti3O12 or Bi3NbTiO9 constituent sub-structures, or as the co-growth of Bi7Ti4NbO21 onto Bi4Ti3O12 grains, were frequently observed using high-resolution transmission electron microscope (HRTEM)m. In order to further find evidence to support the re-ordering picture that was proposed to explain formation of the intergrowth and associated defects, we employ the low- and medium-resolution high-angle annular-dark-field (HAADF) imaging combined with the quantitative energy dispersive X-ray spectroscope (EDXS) analysis to probe into a heavily defected intergrowth structure. A gradual transformation from the ordered intergrowth of both sub-structures to the dominance of Bi4Ti3O12 sub-structure was observed. A substantial level of Nb solution could be detected in n-layered Bi4Ti3O12 sub-structure by spatially-resolved compositional quantification to differentiate the contribution from the adjacent single Bi3NbTiO9 layer. The presence of a finite Nb concentration in the Bi4Ti3O12 sub-structure indicates a substantial and uniform cations inter-change occurred between the two sub-structures, which is inherited most likely from the parent phases via the partially dissolved sintering melts".
引用
收藏
页码:561 / 565
页数:5
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