Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells

被引：13
|
作者：
Sheng, P. [1 ]
Bonell, F. [1 ]
Miwa, S. [1 ]
Nakamura, T. [2 ]
Shiota, Y. [1 ]
Murakami, S. [1 ]
Lam, D. D. [1 ]
Yoshida, S. [1 ]
Suzuki, Y. [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 03期
关键词：
THIN-FILMS; OVERLAYERS;
D O I：
10.1063/1.4789438
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW) states in the ultrathin Fe (001) electrode. However, resonant positions of QW states were systematically shifted by one monolayer when compared with the first-principles calculation results. X-ray absorption spectroscopy and magnetic circular dichroism measurements were also performed. While Fe oxide presence at Fe/MgO interface was ruled out, Fe/Cr intermixing could not be excluded. Hence, controlling the Fe/Cr interface may affect QW state. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789438]
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页数：4
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