Induced structural damages by He+ irradiation in conducting transparent indium-tin oxide thin films

被引：18
|
作者：
Maaza, M
Nemraoui, O
Beye, AC
Sella, C
Derry, T
机构：
[1] iThemba LABS, Mat Res Grp, Nanosci Labs, ZA-7129 Faure, South Africa
[2] Rand Afrikaans Univ, Dept Phys, Johannesburg, South Africa
[3] Princeton Univ, Princeton Mat Inst, Princeton, NJ 08544 USA
[4] Univ Paris 06, Lab Opt Solides, Paris, France
[5] iThemba LABS, Schonland Nucl Ctr, ZA-2050 Wits, South Africa
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
transparent conducting materials; indium tin oxide; thin films; ion beam implantation; structural damages;
D O I：
10.1016/j.solmat.2004.09.023
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Irradiation of polycrystalline sputter-deposited ITO thin films on float-glass substrates was performed with high-energy MeV He+ ion beam implantation at doses in the range 2-6 x 10(+15) ions/cm(2). A significant change in both surface morphology and crystallographic structure after implantation was observed. It results in a crystallographic disorder of large crystallites with the ion dose, creation of electronic defects and a roughening of the ITO thin-films' surface. (C) 2005 Published by Elsevier B.V.
引用
收藏
页码：111 / 119
页数：9
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