Mobility edge in nondegenerate semiconductor with random potential of charged impurities

被引：0
|
作者：
Kagan, MS [1 ]
Landsberg, EG [1 ]
Zhdanova, NG [1 ]
机构：
[1] Russian Acad Sci, Inst Radioengn & Elect, RU-103907 Moscow, Russia
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS | 1999年 / 297-2卷
关键词：
localization; mobility edge; quantum corrections to the conductivity; magnetoresistance;
D O I：
10.4028/www.scientific.net/MSF.297-298.53
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-temperature mobility saturation found in a nondegenerate 3D electron gas at strong charged-impurity scattering was shown to be due to quantum mobility edge existence. The negative magnetoresistance caused by magnetic field suppression of interference corrections to the conductivity was observed. The corrections were found to be small near the mobility edge.
引用
收藏
页码：53 / 56
页数：4
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