High-pressure synthesis of a gallium oxonitride with a spinel-type structure

The new compound Ga2.81O3.57N0.43 was crystallized under high-pressure / high-temperature conditions in a spinel-type structure from a prestructured gallium oxonitride ceramic, which was obtained from the single-source molecular precursor [Ga(O'Bu)(2)NMe2](2) by thermal treatment in an ammonia atmosphere. The optimized precursor-derived gallium oxonitride ceramic remains nanocrystalline up to 600 degrees C and can be transformed at 7 GPa and I 100 degrees C into the crystalline phase Ga(2.81)0(3.57)N(0.43). The structure, homogeneity, and nitrogen to oxygen ratio were determined using TEM coupled with an electron energy loss spectrometer (EELS) and an energy dispersive X-ray (EDX) spectrometer. For phase analysis and structure confirmation, X-ray powder diffraction data were measured.