Photocapacitance study of boron-doped chemical-vapor-deposited diamond

被引：17
|
作者：
Zeisel, R
Nebel, CE
Stutzmann, M
Gheeraert, E
Deneuville, A
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.60.2476
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss capacitance-voltage and optically excited deep-level transient spectroscopy (ODLTS) experiments carried out on boron-doped diamond, homoepitaxially grown by chemical-vapor deposition. ODLTS reveals an acceptor-type defect at 1.28 eV above the valence-band edge with a concentration of approximate to 1 x 10(16) cm(-3). From the temperature dependence of the ODLTS spectra, a lattice coupling of this electronic defect level is deduced, which is characterized by a Franck-Condon shift of 0.16 eV. [S0163-1829(99)09827-6].
引用
收藏
页码：2476 / 2479
页数：4
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