Conductance spikes in single-walled carbon nanotube field-effect transistor

被引：31
|
作者：
Liu, K
Burghard, M
Roth, S
Bernier, P
机构：
[1] Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany
[2] Univ Montpellier, Montpellier 5, France
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 16期
关键词：
D O I：
10.1063/1.125059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanoscale field-effect transistor (FET) has been fabricated from single-walled carbon nanotubes (CNTs). At similar to 5 K, the transistor shows pronounced field effect. Most interestingly, reproducible spikes are observed in the channel conductance as a function of the gate voltage. These conductance spikes are attributed to van Hove singularities in the electronic density of states in the carbon nanotubes. Based on the observation of these conductance spikes, a mechanism is proposed for the charge transport in CNT FETs. (C) 1999 American Institute of Physics. [S0003-6951(99)04039-5].
引用
收藏
页码：2494 / 2496
页数：3
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