Dry etching of SrBi2Ta2O9:: Comparison of inductively coupled plasma chemistries

被引：8
|
作者：
Park, JS [1 ]
Kim, TH [1 ]
Choi, CS [1 ]
Hahn, YB [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea
来源：
KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2002年 / 19卷 / 03期
关键词：
dry etching; SBT(SrBi2Ta2O9); ICPs;
D O I：
10.1007/BF02697161
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A systematic study of the etch characteristics of SrBi2Ta2O9 (SBT) thin films in inductively coupled plasmas (ICPs) has been performed with various chemistries of Cl-2/Ar, Cl-2/O-2/Ar, Cl-2/NF3/Ar, and Cl-2/NF3/O-2/Ar. Etch rate was dependent on plasma chemistries and parameters. Addition of 0, stabilized the perovskite structure of SBT film and suppressed the etch rate, but NF3 enhanced the etch rate substantially mainly due to reactive fluorine radicals. Maximum etch rates obtained were: 740 Angstrom/min with Cl-2/Ar, 320 Angstrom/min with Cl-2/O-2/Ar, 1,500 Angstrom/min with Cl-2/NF3/Ar, and 1,600 Angstrom/min with Cl-2/NF3/O-2/Ar at 5 mTorr, 700 W ICP power and 150 W rf chuck power. Electrical properties of the SBT films were quite dependent on plasma chemistries employed; Cl-2/NF3/O-2/Ar showed the least damage in the films and resulted in the best P-E hysteresis loop having remnant polarization (2P(r)) = 12.3 muC/cm(2) and coercive field (E-c)=41.9 V/cm.
引用
收藏
页码：486 / 490
页数：5
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