MM-wave HEMT based circuits and their system applications

被引：2

作者：

Dickmann, J ^{[1
]}

Berg, M ^{[1
]}

Ziegler, V ^{[1
]}

Wölk, C ^{[1
]}

Deufel, R ^{[1
]}

机构：

[1] Daimler Chrysler AG, Res Ctr Ulm, D-89081 Ulm, Germany

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(99)00109-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development status of millimeter-wave HEMTs on GaAs has improved to a status where widespread use has become normal in modern information systems for communication and sensor application. The remaining challenge for MMICs is to meet the cost margin in order to be economically attractive for commercial markets. For commercial applications it is generally preferred to offer performance identical to competing technologies at a lower cost than to offer improved performance at the same cost. Although it seems enigmatic, for certain rapidly evolving system applications, alternative InP-based generations of HEMT devices either on InP- or GaAs-substrate may become attractive. This paper focuses on this topic. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1607 / 1612

页数：6

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