Error Correcting Code for Flash Memories

被引：0
|
作者：
Jiang, Anxiao [1 ]
Li, Yue [1 ]
Gad, Eyal En [3 ]
Langberg, Michael [2 ,3 ]
Bruck, Jehoshua [3 ]
机构：
[1] Texas A&M Univ, Dept Comp Sci & Engn, College Stn, TX 77843 USA
[2] Open Univ Israel, Dept Math & Comp Sci, Raanana, Israel
[3] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
来源：
2013 INFORMATION THEORY AND APPLICATIONS WORKSHOP (ITA) | 2013年
关键词：
WRITE-ONCE MEMORIES; CAPACITY;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Flash memories have many distinct properties, which affect the design of error correcting codes. In this paper, we combine error correction with rewriting, and present such a code construction based on polar coding.
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页数：4
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