Low-dropout Regulator Using Body-driven Technique

被引：0

作者：

Kim, Kyunghwan ^{[1
]}

Park, Wonsuk ^{[1
]}

Kim, Dongsu ^{[1
]}

Park, Junsoo ^{[1
]}

Song, Bobae ^{[1
]}

Koo, Yongseo ^{[1
]}

机构：

[1] Dankook Univ, Dept Elect & Elect Engn, Kyonggi Do, South Korea

来源：

TENCON 2012 - 2012 IEEE REGION 10 CONFERENCE: SUSTAINABLE DEVELOPMENT THROUGH HUMANITARIAN TECHNOLOGY | 2012年

关键词：

component; LDO regulator; linear regulator; forward body driven technique; body effect; body bias; pass transistor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small size and high performance LDO regulator using body driven technique is presented in this paper. The body driven technique can decrease threshold voltage (Vth) and increase the current I-D flowing from drain to source in current. The technique is applied to the error amplifier, voltage buffer and pass transistor to reduce chip size and maintain the same performance as conventional LDO regulator. The pass transistor using the technique can reduce the size 5.4% compared with conventional pass transistor at 150mA load condition. The proposed current mirror in error amplifier and voltage buffer can save the area about 61% compared with the conventional current mirror. The proposed LDO regulator works under the input voltage of 2.7V similar to 4.5V and provides up to 150mA load current for an output voltage range of 1.2 similar to 3.3V.

引用

页数：5

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