A passive Q-switched microchip Er/Yb glass laser pumped by laser diode

被引：0
|
作者：
Song Feng [1 ]
Wu Zhao-Hui
Liu Shu-Jing
Cai Hong
Tian Jian-Guo
Zhang Guang-Yin
Denker, Boris
Sverchkov, Sergei
机构：
[1] Nankai Univ, Photon Ctr, Tianjin 300071, Peoples R China
[2] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China
[3] Russian Acad Sci, GPI, Moscow 117901, Russia
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A laser-diode-pumped 1.54-mu m passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium 14 concentrations of 1 wt.% and 21 wt.%, respectively. A Co2+ :MgAl2O4 slab crystal was used as a passive Q-switcher. Q-switched pulses with repetition frequency of 800 Hz, width of 7.4ns, peak power of 2.2kW and average power of 13.3mW were obtained when absorbed pump power was 475mW. A sandwich structure of the Q-switched microchip Er/Yb glass laser was demonstrated, which shows shorter pulse width of 6.8 ns. Dependences of pulse duration and repetition frequency on pump power were also investigated.
引用
收藏
页码：1195 / 1197
页数：3
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