Photoionization of trapped carriers in avalanche photodiodes to reduce afterpulsing during Geiger-mode photon counting

被引：0
|
作者：
Krainak, MA [1 ]
机构：
[1] NASA, Goddard Space Flight Ctr, Laser & Electroopt Branch, Greenbelt, MD 20771 USA
来源：
2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 | 2005年
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (k=1.95 mu m) laser diode illumination, which we believe photoionizes the trapped carriers. (c) 2005 Optical Society of America.
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页码：588 / 590
页数：3
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