Improvement the Efficiency of Solar Cell Based on GaAsNSb/Si

被引：0

作者：

Aissat, Abdelkader ^{[1
]}

Bestam, Rachid ^{[1
]}

Nacer, Said ^{[1
]}

Bellil, Wafa ^{[2
]}

Vilcot, Jean Pierre ^{[2
]}

机构：

[1] Univ Blida 1, Fac Technol, Blida 09000, Algeria

[2] Univ Sci & Technol Lille, CNRS, UMR 8520, IEMN, Ave Poincare,BP 60069, F-95965 Villeneuve Dascq, France

来源：

2018 6TH INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC) | 2018年

关键词：

New materials; semiconductor III-V/Si; solar cell; photovoltaic;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this work, we studied and simulated a GaAsNSb structure on Si substrate. Moreover, we applied the anticrossing model on the conduction and valence bands (VBAC). We considered the antimony (Sb) and nitrogen (N) concentration effect on strain, band gap energy and electrical characteristics. Then we determined the efficiency eta of the solar cell structure GaAsNSb/Si. The effect of Sb and N concentrations on the cell efficiency is taken into account. For Sb = 12% and N = 1% an efficiency of around 27% is obtained. This investigation allowed us to optimize the structure in order to create a high efficiency and reliable solar cell. Our results can be used to improve the efficiency of a multi-junction solar cell.

引用

页码：52 / 55

页数：4

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