A 17.3-20.2 GHz Fully Integrated Linear Balanced Power Amplifier in 130nm BiCMOS Technology

被引：0
|
作者：
Manuel, Potereau [1 ]
Nathalie, Deltimple [1 ]
Anthony, Ghiotto [1 ]
Magali, Dematos [1 ]
机构：
[1] Univ Bordeaux, IMS Res Ctr, Bordeaux INP, UMR CNRS 5218, Bordeaux, France
来源：
2018 25TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2018年
关键词：
AM/PM; radiofrequency; power amplifier; balanced topology; linear class; class-A; mntW; SiGe;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A balanced power amplifier has been implemented in a 130nm SiGe BiCMOS technology. It delivers 14 dBm maximum output power and a phase shift as low as 0.2 at 5 dBm of output power. The balanced amplifier is composed of two hybrid couplers and two power cells. The device has been optimized for operation at Ku-band (17.2 to 20.2GHz) and reaches a small signal gain of 7 dB with a maximum saturated output power of 14 dBm. Moreover, it exposes a gain and a phase shift immune to temperature variation (<0.002 dB/ C and 0.002 PC respectively).
引用
收藏
页码：41 / 44
页数：4
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