S-parameter characterization of mm-wave Impatt oscillators

被引：0
|
作者：
Hasch, J [1 ]
Kasper, E
机构：
[1] Robert Bosch GmbH, Cent Res & Dev, CR-ARE1,POB 10 60 50, D-70049 Stuttgart, Germany
[2] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Designing oscillators in a fully monolithically integrated technology requires accurate characterization of the active element, as well as the surrounding passive circuitry. Based upon S parameter measurements of Impatt diodes, millimeter wave oscillators up to 124 GHz have been designed,manufactured and measured. Two measurements setups covering the frequency range from 0.04 - 140 GHz were used and a careful calibration approach was applied.
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页码：213 / +
页数：2
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