Raman spectro-analysis of MPCVD diamond films

被引:0
|
作者
Zhang, DP [1 ]
Le, DF [1 ]
Hu, YG [1 ]
机构
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
关键词
Raman scattering; CVD diamond; purity; stress;
D O I
暂无
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Diamond thin films were deposited on silicon wafers in microwave plasma chemical vapor deposition(MPCVD). The diamond films properties such as structure, purity and stress characterized in one time by Raman spectro-analysis. And the relations between the growth parameters and the films properties are also studied. The results indicates that the diamond thin films which deposited in MPCVD method composed of not only diamond ingredient but also non-diamond ingredient, and the relations between the purity and microwave power is not obviously. And the stress in the thin film showed up in tension.
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收藏
页码:251 / 253
页数:3
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