Melt processing of Bi-2212 on MgO and MgO-buffered substrates

被引：8
|
作者：
Naylor, MJ [1 ]
Grovenor, CRM [1 ]
机构：
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期
关键词：
D O I：
10.1109/77.784820
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
,Bi-2212 thick films have been prepared by full and partial melt processing to investigate the suitability of MgO substrates in polycrystalline, single crystal and buffer layer formats. There is a marked difference in microstructural and electrical properties between thick films on polycrystalline and single crystal MgO substrates. This is attributed to the degree of interaction between the liquid phase and substrate during melting. The thickness of films on single crystal MgO substrates is an important consideration in the optimization of the superconducting transport properties.
引用
收藏
页码：1860 / 1863
页数：4
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