Materials development and current transport in vacuum microelectronic devices

被引：2

作者：

Rack, PD ^{[1
]}

Li, J ^{[1
]}

Ostdiek, P ^{[1
]}

Peterson, JJ ^{[1
]}

Li, L ^{[1
]}

Rogelstad, T ^{[1
]}

机构：

[1] Rochester Inst Technol, Dept Microelect Engn, Rochester, NY 14623 USA

来源：

FOURTEENTH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/UGIM.2001.960316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple vacuum diode structure has been fabricated using standard microelectronic processing and the electron transport has been investigated. Tungsten and tungsten-carbon thin films have been evaluated and the work function of the tungsten-carbon emitter material was determined to be similar to3.6 eV. A sharpened emitter structure was also fabricated which had a significantly lower turn-on field due to a geometric enhancement in the emitter tip. The electron transport was found to conduct along the surface of the device, which was attributed to dielectric loading of the underlying SiO2 layer. Other contributions which affect the electron trajectory were suggested such as electron-electron Coulomb repulsion as well as dynamic surface charging.

引用

页码：140 / 143

页数：4

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