5.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matching

被引:3
|
作者
Meng, C. C. [1 ]
Jhong, J. C. [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu, Taiwan
关键词
GaInP/GaAs HBT; LNA; cascode; emitter inductive degeneration; noise;
D O I
10.1002/mop.21742
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A gain boosting method without noise-figure degradation by optimizing interstage matching in a coscode low-noise amplifier (LNA) with emitter-degeneration inductor is demonstrated at 5.2 GHz using 2-mu m GaInP/GaAs HBT technology. A low-pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter-degeneration-inductor to enhance the gain with the same current consumption. The 2-mu m GaInP/GaAs HBT LNA without interstage matching has 14-dB power gain and 2.37-dB noise figure at 5.2 GHz while the 2-mu m GaInP/GaAs HBT LNA with interstage matching has 19.5-dB power gain and 2.22-dB noise figure at 5.2 GHz. The current consumption is 2.3 mA and voltage supply is 3.6 V. (c) 2006 Wiley Periodicals, Inc.
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页码:1499 / 1501
页数:3
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