Scanning of irradiated silicon detectors using alpha particles and low-energy protons

被引：8

作者：

Casse, G

Dolezal, Z

Glaser, M

Kohout, Z

Konícek, J

Lemeilleur, F

Leroy, C

Linhart, V

Mares, JJ

Pospísil, S

Roy, P

Sopko, B

Sinor, M

Svejda, J

Vorobel, V

Wilhelm, I

机构：

[1] Czech Tech Univ, Fac Nucl Sci & Phys Engn, Dept Phys, CZ-11519 Prague 1, Czech Republic

[2] CERN, Div EP, CH-1211 Geneva, Switzerland

[3] Charles Univ, Fac Math & Phys, Nucl Ctr, CZ-18000 Prague 8, Czech Republic

[4] Czech Tech Univ, Fac Mech Engn, Dept Phys, CZ-16607 Prague 6, Czech Republic

[5] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada

[6] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 434卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(99)00591-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：118 / 130

页数：13

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