40Gbit/s germanium waveguide photodetector on silicon

被引：2

作者：

Virot, Leopold ^{[1
,3
,4
]}

Vivien, Laurent ^{[1
]}

Polzer, Andreas ^{[2
]}

Marris-Morini, Delphine ^{[1
]}

Osmond, Johann ^{[1
]}

Hartmann, Jean Michel ^{[3
]}

Crozat, Paul ^{[1
]}

Cassan, Eric ^{[1
]}

Baudot, Charles ^{[4
]}

Kopp, Christophe ^{[3
]}

Boeuf, Frederic ^{[4
]}

Zimmermann, Horst ^{[2
]}

Fedeli, Jean Marc ^{[3
]}

机构：

[1] Univ Paris Sud, IEF, CNRS, Bat 220, F-91405 Orsay, France

[2] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, A-1040 Vienna, Austria

[3] CEA, LETI, F-38054 Grenoble, France

[4] STMicroelectronics, Silicon Technol Dev, Crolles, France

来源：

SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III | 2012年 / 8431卷

关键词：

Integrated photodetector; germanium; silicon; silicon on insulator (SOI); PIN photodiode; MODULATOR;

D O I：

10.1117/12.923854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a Germanium lateral pin photodiode integrated with selective epitaxy at the end of silicon waveguide. A very high optical bandwidth estimated at 120GHz is shown, with internal responsivity as high as 0.8A/W at 1550nm wavelength. Open eye diagram at 40Gb/s was obtained under zero-bias at wavelength of 1.55 mu m.

引用

页数：7

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