The Electrochemical Performance Of SnO2 Film Incorporated With RuO2

被引：0
|
作者：
Pusawale, S. N. [1 ]
Deshmukh, P. R. [1 ]
Lokhande, C. D. [1 ]
机构：
[1] Rajarambapu Inst Technol, Sakharale, India
来源：
SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷
关键词：
Chemical deposition; RuO2; SnO2; Thin Film; Electrochemical capacitance;
D O I：
10.1063/1.4791255
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the present investigation RuO2 incorporated SnO2 films were prepared by chemical deposition method and characterized for their structural, morphological and electrochemical properties by means of Fourier transform infrared spectroscopy, scanning electron microscopy and cyclic voltammetry. The electrochemical performance of SnO2 was improved by RuO2 as an additive in the deposition. It was observed that the specific capacitance of SnO2 was enhanced from 4 to 166 F g(-1) after incorporation of 15 vol.% of RuCl3, due to the pseudocapacitance coming from RuO2.
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页码：750 / 751
页数：2
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