Effect of C=C content on I-V characteristics of fluorinated amorphous carbon thin films

被引:3
|
作者
Chao, Y [1 ]
Ning, ZY [1 ]
Cheng, SH [1 ]
Yu, X [1 ]
Xu, SH [1 ]
机构
[1] Suzhou Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
关键词
amorphous fluorinated carbon; I-V characteristic; C=C double bonds;
D O I
10.7498/aps.53.1496
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The current-voltage characteristics of amorphous fluorinated carbon (a-C:F) films prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) are investigated. The different changes in electric conduction as C = C content is increased are observed for the films with different C-F-x composition. The I-V characteristic follows a nonlinear law of I = aV + bV(n) (n > 1). It shows that the ohmic conduction is dominated at low fields while the space charge limited currents (SCLCs) is dominated at high field. For a-C: F films, the space charge limited currents are relevant to density of state at band-tails controlled by C = C bonds in the films.
引用
收藏
页码:1496 / 1500
页数:5
相关论文
共 20 条
  • [1] Electrical properties of fluorinated amorphous carbon films
    Biswas, N
    Harris, HR
    Wang, X
    Celebi, G
    Temkin, H
    Gangopadhyay, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4417 - 4421
  • [2] Structural and optical properties of amorphous hydrogenated fluorinated carbon films produced by PECVD
    Durrant, SF
    Castro, SGC
    BolivarMarinez, LE
    Galvao, DS
    deMoraes, MAB
    [J]. THIN SOLID FILMS, 1997, 304 (1-2) : 149 - 156
  • [3] Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
    Endo, K
    Shinoda, K
    Tatsumi, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2739 - 2745
  • [4] ENGO K, 1997, MRS BULL, V10, P55
  • [5] ELECTRICAL-CONDUCTION AND DEEP LEVELS IN POLYCRYSTALLINE DIAMOND FILMS
    GONON, P
    DENEUVILLE, A
    FONTAINE, F
    GHEERAERT, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) : 6633 - 6638
  • [6] Hendiricks NH, 2003, SOLID STATE TECHNOL, V46, P31
  • [7] The influence of annealing in vacuum on the structures of a-C:F thin films
    Huang, F
    Cheng, SH
    Ning, ZY
    Yang, SD
    Ye, C
    [J]. ACTA PHYSICA SINICA, 2002, 51 (06) : 1383 - 1387
  • [8] KAO KC, 1991, ELECT TRANSPORT SOLI, P4
  • [9] Low-dielectric-constant materials for ULSI interlayer-dielectric applications
    Lee, WW
    Ho, PS
    [J]. MRS BULLETIN, 1997, 22 (10) : 19 - 24
  • [10] Low dielectric constant materials for microelectronics
    Maex, K
    Baklanov, MR
    Shamiryan, D
    Iacopi, F
    Brongersma, SH
    Yanovitskaya, ZS
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) : 8793 - 8841