Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

被引：4
|
作者：
Huan, Ya-Wei [1 ]
Liu, Wen-Jun [1 ]
Tang, Xiao-Bing [1 ]
Xue, Xiao-Yong [1 ]
Wang, Xiao-Lei [2 ]
Sun, Qing-Qing [1 ]
Ding, Shi-Jin [1 ]
机构：
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期
基金：
中国国家自然科学基金;
关键词：
Nitridation treatment; Band alignment; Few-layer MoS2; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; HAFNIUM OXIDE; MOS2; HFO2; OFFSETS; FILMS;
D O I：
10.1186/s11671-019-3020-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 +/- 0.1 (2.41 +/- 0.1) and 2.34 +/- 0.1 (2.16 +/- 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO2 triggered by nitridation. This study on the energy band engineering of MoS2/HfO2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.
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页数：6
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