Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures

The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and in situ doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. (C) 1997 American Institute of Physics.