β-SiC(100) surface:: atomic structures and electronic properties

被引:20
|
作者
Aristov, VY [1 ]
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
关键词
D O I
10.1070/PU2001v044n08ABEH000979
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This review organizes and presents the state of the art of research related to the composition, atomic and electronic structure, and electronic properties of various superstructures that were recently shown to exist on clean beta-SiC(100) surfaces. In the past 10 years, considerable experimental and theoretical progress in clean beta-SiC(100) surfaces has been made. In particular, various surface reconstructions have been identified and studied, and the controlled formation of highly stable, very long straight lines of Si dimers self-organizing on a beta-SiC(100) surface have been found, with the line separation being determined by the annealing time and temperature. Many aspects of the field (composition, unit cell models, etc.) are still subject to debate, however.
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收藏
页码:761 / 783
页数:23
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