Phonons, magnons, and lattice thermal transport in antiferromagnetic semiconductor MnTe

被引:35
|
作者
Mu, Sai [1 ]
Hermann, Raphael P. [1 ]
Gorsse, Stephane [2 ,3 ]
Zhao, Huaizhou [4 ]
Manley, Michael E. [1 ]
Fishman, Randy S. [1 ]
Lindsay, L. [1 ]
机构
[1] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[2] Univ Bordeaux, CNRS, ICMCB UMR 5026, F-33600 Pessac, France
[3] ENSCBP, Bordeaux INP, F-33600 Pessac, France
[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源
PHYSICAL REVIEW MATERIALS | 2019年 / 3卷 / 02期
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; MAGNETIC-PROPERTIES; BAND-STRUCTURE; TEMPERATURE;
D O I
10.1103/PhysRevMaterials.3.025403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The antiferromagnetic semiconductor MnTe has recently attracted attention for spintronics and high-performance thermoelectric applications. However, little is known about its vibrational and thermal transport properties and how these might relate to the electronic and magnetic structure, particularly as related to 3d Mn orbital correlations. Here, we calculate a physically justified Coulomb correlation parameter within the DFT + U framework. We couple this framework with the Heisenberg Hamiltonian and first-principles Boltzmann transport to understand the magnetic, vibrational, and phonon thermal transport properties of MnTe. We also perform inelastic neutron and nuclear inelastic x-ray scattering measurements of the total and partial phonon density of states, respectively. Very good agreement is obtained with the measured and calculated phonon density of states, and with available measurements for the band gap, local magnetic moments, Neel temperature, magnon dispersion, thermal conductivity, and phonon dispersion. This study demonstrates that the vibrational and magnetic degrees of freedom are not strongly coupled in MnTe, and provides a more comprehensive picture of this technologically promising material.
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页数:7
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