Scattering from spin-polarized charged impurities in graphene

被引：12
|
作者：
Vierimaa, Ville [1 ]
Fan, Zheyong [1 ]
Harju, Ari [1 ]
机构：
[1] Aalto Univ, Dept Appl Phys, COMP Ctr Excellence, Helsinki, Finland
来源：
PHYSICAL REVIEW B | 2017年 / 95卷 / 04期
基金：
芬兰科学院;
关键词：
RELAXATION; STATE;
D O I：
10.1103/PhysRevB.95.041401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the spin relaxation of charge carriers in graphene in the presence of spin-polarized charged impurities by calculating the time evolution of an initially polarized state. The spin relaxation time shows completely different energy behavior for short-ranged and long-ranged spin scatterers and can be used to identify the dominant source of spin scattering. Our results agree well with recent experimental findings and indicate that their spin relaxation is likely caused by long-ranged scatterers.
引用
收藏
页数：5
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