ELECTRIC AND OPTICAL PROPERTIES OF In2-x-ySnxZnyO3-δ THIN FILMS

被引：0

作者：

Iacomi, F. ^{[1
]}

Lazar, A. ^{[1
]}

Frunza, R. ^{[1
]}

Rotaru, R. ^{[1
]}

Carlescu, A. ^{[1
]}

Sandu, I. ^{[2
]}

Purica, M. ^{[3
]}

Gavrila, R. ^{[3
]}

机构：

[1] Alexandru Ioan Cuza Univ, Fac Phys, 11 Carol I Blvd, Iasi 700506, Romania

[2] AI I Cuza Univ, Interdisciplinary Lab Scientif Investigat, Iasi, Romania

[3] Natl Inst R & D Microtechnol, Bucharest, Romania

来源：

2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 | 2011年

关键词：

n-type TCO; p-type TCO; structure; optical properties; electrical properties;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some p-type and n-type ZITO transparent and conductive films of 300 nm thickness, have been deposited by vacuum thermal evaporation and oxidation in air on different substrates. The electrical and optical properties of the thin films have been studied as a function of chemical composition, substrate nature and annealing conditions. X-ray diffraction and scanning electron microscopy were used in order to investigate thin film structures. The electrical conductivity and transmittance of n-type thin films are higher than electrical conductivity and transmittance of p-type thin films.

引用

页码：283 / 286

页数：4

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