Chemical driving force for diffusion-induced recrystallization or diffusion-induced grain boundary migration in a binary system consisting of nonvolatile elements

被引：17
|
作者：
Kajhara, M [1 ]
机构：
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
SCRIPTA MATERIALIA | 2006年 / 54卷 / 10期
关键词：
diffusion bonding; electron probe microanalysis; conductor; grain boundary diffusion; modelling;
D O I：
10.1016/j.scriptamat.2006.01.035
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new model has been proposed to evaluate the chemical driving force for diffusion-induced recrystallization (DIR) or diffusion-induced grain boundary migration in the A(B) system, where elements A and B are nonvolatile at solid-state reaction temperatures. The experimental results for DIR in the Ag(Sn) and Cu(Ni) systems in previous studies have been numerically analyzed using the new model. The analyses indicate that a region with discontinuously different composition is formed by DIR in the early stages of the reaction with the maximum driving force. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页码：1767 / 1772
页数：6
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