Insights into the Energy Levels of Semiconductor Nanocrystals by a Dopant Approach

被引：21

作者：

Zhang, Zhuolei ^{[1
]}

Li, Dongze ^{[1
]}

Xie, Renguo ^{[1
]}

Yang, Wensheng ^{[1
]}

机构：

[1] Jilin Univ, Coll Chem, Changchun 130012, Peoples R China

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2013年 / 52卷 / 19期

关键词：

band gap; dopants; energy levels; nanocrystals; photoluminescence; QUANTUM-DOT; CDSE NANOCRYSTALS; INP NANOCRYSTALS; VALENCE; SIZE; CONFINEMENT; EFFICIENT; EMITTERS; DEFECTS;

D O I：

10.1002/anie.201210080

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Energy levels of semiconductor NCs are vital important for rational design of the nanodevices fabricated by using the NCs as building blocks. An approach for determining the energy levels was developed by introduction of transition-metal ions as dopants. The difference in the energy levels of the NCs with different composition, sizes, and shapes could be clearly revealed by such an approach. CB=conduction band, VB=valence band. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：5052 / 5055

页数：4

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