Effect of Magnetic Field on the Current-Voltage Characteristics of PbSnTe:In Films

被引：1
|
作者：
Epov, Vladimir S. [1 ]
Klimov, Alexander E. [2 ]
Shumsky, Vladimir N. [2 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk, Russia
[2] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk, Russia
来源：
EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS | 2008年
关键词：
narrow-gap semiconductor; magnetoresistance; injection from contacts; traps;
D O I：
10.1109/SIBEDM.2008.4585874
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
Transport of charge carriers in Pb1-xSnxTe:In films at helium temperatures in regimes dominated by charge-carrier injection out of contacts is discussed. Data illustrating the effect of constant magnetic field on the injection currents are reported. Possible mechanisms of observed phenomena are discussed.
引用
收藏
页码：84 / +
页数：2
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