Improved Thermal Stability of RF Power BJT with Ballast Circuits

被引：4

作者：

Guo, Benqing ^{[1
]}

Zhang, Qingzhong ^{[2
]}

机构：

[1] 38 Res Inst CETC, Hefei, Peoples R China

[2] UESTC, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

来源：

FREQUENZ | 2013年 / 67卷 / 11-12期

关键词：

RF power transistor; current convergence; ballast; thermal stability; BIPOLAR-TRANSISTORS; DESIGN;

D O I：

10.1515/freq-2012-0152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve thermal stability and relieve current convergence in rf power bjts, an embedded active CMOS ballast circuit is proposed. By detecting the inhomogeneous temperature through distributed temperature sensors, the adjacent ballast circuit is triggered to shunt the base convergence current of the power BJT cell, performing the ballast protection for the device. Simulations and measurements validate the effectiveness of the proposed ballast circuit. Compared to conventional ballast resistor methods, the improved device integrated with ballast circuits exhibits superior electrical performance. The single ballast circuit only consumes 6.5 mW with additional occupied area of 2530 um(2).

引用

页码：373 / 378

页数：6

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