Feasibility Study of Half- and Full-Bridge Isolated DC/DC Converters in High-Voltage High-Power Applications

被引:6
|
作者
Vinnikov, Dmitri [1 ]
Jalakas, Tanel [1 ]
Egorov, Mikhail [1 ]
机构
[1] Tallinn Univ Technol, Dept Elect Drives & Power Elect, EE-200108 Tallinn, Estonia
关键词
converter circuit; IGBT; high voltage power converters; voltage source converter (VSC);
D O I
10.1109/EPEPEMC.2008.4635441
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 W) applications. Focus is on the primary part of these topologies, i.e. the feasibility of replacement of two high-voltage IGBTs in the full-bridge by two high-voltage film capacitors in the half-bridge. The implementation of a half-bridge topology will lead to a sufficient simplification of a power scheme layout as well as control and protection algorithms. The full-bridge topology gives a clear advantage of the twofold reduced current of inverter switches, thus providing a possibility of implementation of smaller devices for the same transferred power as compared to a half-bridge.
引用
收藏
页码:1257 / 1262
页数:6
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