Quantum-Mechanical Modeling of Nanoelectronic Devices

Numerical simulations of electronic transport in quantum cascade laser emitting in THz frequency range that utilizes indirectly pumped scheme are presented. Calculations were done with nonequilibrium Green's function formalism in the real space basis with non-uniform discretization mesh what differs this approach from earlier attempts. The calculated I-V characteristic fairly well agrees with the experimental data. Good agreement was also found between the lasing frequency and the simulated optical gain peak.