A new microwave dielectric material Ni0.5Ti0.5NbO4

被引：47
|
作者：
Liao, Qingwei [1 ]
Li, Lingxia [1 ]
Ren, Xiang [1 ]
Yu, Xiaoxu [1 ]
Meng, Qinglei [1 ]
Xia, Wangsuo [1 ]
机构：
[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 89卷
基金：
中国博士后科学基金;
关键词：
Ceramics; Crystal structure; Low-loss; Dielectric properties; Niobates;
D O I：
10.1016/j.matlet.2012.08.078
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new low-loss, low sintering temperature microwave dielectric material Ni0.5Ti0.5NbO4 was investigated for the first time. The samples were prepared by solid state reaction method. Single phase Ni0.5Ti0.5NbO4 was obtained and it showed Rutile structure. The variation trend of dielectric constant is in accordance with variation trend of relative density. When the sintering temperature was lower than 1100 degrees C. the Of value mainly depended on the density. However, when the sintering temperature was higher than 1100 degrees C. the Qf value mainly depended on crystal structure. With increase of unit cell volume, the tau(f) increased. The following typical values epsilon=56.8, Qf=21,100 GHz, tau(f)=79.1 x 10(-6)/degrees C were obtained for Ni0.5Ti0.5NbO4 (1100 degrees C/6 h). According to the EIA-198-E, Ni0.5Ti0.5NbO4 met the demand of P2G (N150 for Industry Codes) series. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：351 / 353
页数：3
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