Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

被引：9
|
作者：
Ong, S. N. [1 ,2 ]
Yeo, K. S. [1 ]
Chew, K. W. J. [1 ,2 ]
Chan, L. H. K. [1 ]
Loo, X. S. [1 ,2 ]
Boon, C. C. [1 ]
Do, M. A. [1 ]
机构：
[1] Nanyang Technol Univ, VIRTUS, IC Design Ctr Excellence, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore 738406, Singapore
来源：
SOLID-STATE ELECTRONICS | 2012年 / 72卷
关键词：
Channel thermal noise; High frequency noise modeling; Hot carrier effect; MOSFET; Velocity saturation effect;
D O I：
10.1016/j.sse.2012.02.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise models are derived in four different cases considering the effect of CLM only, CLM and VSE, CLM and HCE, and the combine effect of CLM, VSE and HCE. The noise reduction due to the VSE is found to be completely cancelled out by the noise increment due to the HCE for all the operating conditions. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：8 / 11
页数：4
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