The effect of dislocation loops on the light emission of silicon LEDs

被引：5

作者：

Hoang, T ^{[1
]}

LeMinh, P ^{[1
]}

Holleman, J ^{[1
]}

Schmitz, J ^{[1
]}

机构：

[1] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1-6]. In this paper we report our results on light emission of silicon p(+)n diodes with various defect engineering approaches. The p(+) region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.

引用

页码：359 / 362

页数：4

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