Understanding the effect of confinement in scanning spreading resistance microscopy measurements

被引:6
|
作者
Pandey, Komal [1 ,2 ]
Paredis, Kristof [1 ]
Robson, Alexander J. [3 ,4 ]
Vandervorst, Wilfried [1 ,2 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Quantum Solid State Phys, Celestijnenlaan 200D, B-3001 Leuven, Belgium
[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[4] Univ Lancaster, Lancaster Mat Anal, Lancaster LA1 4YB, England
关键词
SILICON;
D O I
10.1063/5.0011703
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10nm dimensions of advanced devices and the introduction of three-dimensional architectures like fin field effect transistor (FinFET) and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, the presence of multiple interfaces, and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a simulation assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket silicon on insulator wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Furthermore, we show that accurate carrier quantification is ensured for typical back contact distances of 1 mu m if the region of interest is at least nine times larger than the probe radius.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Electrical properties measurements on individual carbon nanofibers by scanning spreading resistance microscopy
    Fourdrinier, L.
    Le Poche, H.
    Chevalier, N.
    Mariolle, D.
    Rouviere, E.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
  • [2] Outwitting the series resistance in scanning spreading resistance microscopy
    Schulze, A.
    Cao, R.
    Eyben, P.
    Hantschel, T.
    Vandervorst, W.
    [J]. ULTRAMICROSCOPY, 2016, 161 : 59 - 65
  • [3] The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
    Pandey, Komal
    Paredis, Kristof
    Hantschel, Thomas
    Drijbooms, Chris
    Vandervorst, Wilfried
    [J]. SCIENTIFIC REPORTS, 2020, 10 (01)
  • [4] The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
    Komal Pandey
    Kristof Paredis
    Thomas Hantschel
    Chris Drijbooms
    Wilfried Vandervorst
    [J]. Scientific Reports, 10
  • [5] Electrical Measurements By Scanning Spreading Resistance Microscopy: Application To Carbon Nanofibers And Si Nanowires
    Chevalier, N.
    Mariolle, D.
    Fourdrinier, L.
    Celle, C.
    Mouchet, C.
    Poncet, S.
    Simonato, J. P.
    Le Poche, H.
    Rouviere, E.
    Bertin, F.
    Chabli, A.
    [J]. FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 285 - +
  • [6] Assessing the resolution limits of scanning spreading resistance microscopy and scanning capacitance microscopy.
    Eyben, P
    Duhayon, N
    Alvarez, D
    Vandervorst, W
    [J]. CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 2003, 683 : 678 - 684
  • [7] Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy
    Eyben, P
    Duhayon, N
    Clarysse, I
    Vandervorst, W
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02): : 737 - 743
  • [8] Characterization of AIIIBV epitaxial layers by scanning spreading resistance microscopy
    Szyszka, Adam
    Sciana, Beata
    Radziewicz, Damian
    Macherzynski, Wojciech
    Paszkiewicz, Bogdan
    Tlaczala, Marek
    [J]. OPTICA APPLICATA, 2011, 41 (02) : 281 - 288
  • [9] Highly conductive diamond probes for scanning spreading resistance microscopy
    Hantschel, T
    Niedermann, P
    Trenkler, T
    Vandervorst, W
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1603 - 1605
  • [10] Scanning spreading resistance microscopy of shallow doping profiles in silicon
    Suchodolskis, A.
    Hallen, A.
    Gran, J.
    Hansen, T-E.
    Karlsson, U. O.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 141 - 144