Structural and temperature-dependent optical properties of thermally evaporated CdS thin films

被引:37
|
作者
Isik, M. [1 ]
Gullu, H. H. [1 ]
Delice, S. [2 ]
Parlak, M. [3 ,4 ]
Gasanly, N. M. [3 ,5 ]
机构
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Hitit Univ, Dept Phys, TR-19040 Corum, Turkey
[3] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
[4] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, TR-06800 Ankara, Turkey
[5] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan
关键词
CdS; Thin film; Optical properties; PULSED-LASER DEPOSITION; PHOTOVOLTAIC PROPERTIES; OPTIMIZATION; THICKNESS; GAP;
D O I
10.1016/j.mssp.2019.01.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were carried out to characterize the thin films and obtain information about the crystal structure, atomic composition, surface morphology and vibrational modes. Temperature-dependent transmission measurements were performed in between 10 and 300 K and in the spectral range of 400-1050 nm. The analyses of transmittance spectra were accomplished by two different methods called as the absorption coefficient and the derivative spectrophotometry analyses. All evaluated band gap energy values at each studied temperature were in good agreement with each other depending on the applied analyses techniques. Room temperature gap energy values were found around 2.39 eV and 2.40 eV from absorption coefficient and derivative spectrophotometry analyses, respectively. Band gap energy depending on the sample temperature was studied under the light of two different models to investigate average phonon energy, electron phonon coupling parameter and the rate of change of band gap energy with temperature.
引用
收藏
页码:148 / 152
页数:5
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