Synthesis and low temperature densification of (Zr0.8Sn0.2)TiO4 ceramics with improved dielectric properties

被引:3
|
作者
Zhang, Liming [1 ,2 ]
Gong, Wenyuan [1 ,2 ]
Xin, Miao [1 ,2 ]
Chang, Yi [1 ,2 ]
Luo, Xianfu [1 ,2 ]
Zhou, Hongqing [1 ,2 ]
机构
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Jiangsu, Peoples R China
[2] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Jiangsu, Peoples R China
关键词
SINTERING BEHAVIOR; CRYSTAL-STRUCTURE; MICROSTRUCTURE; SUBSTITUTION; ADDITIVES;
D O I
10.1007/s10854-019-00818-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A conventional solid-stated reaction was used to synthesize the (Zr0.8Sn0.2)TiO4 powders with varying pre-sintering temperature parameters. Through evaluating the synthetical properties of sintered ceramics prepared by different calcining methods, R3 route with a soaking time of 1.5h and cooling rate of 3 degrees C min(-1) was determined as the optimal pre-sintering process. Subsequently, La2O3/CBS additives were added into ZST powders, leading to depression of sintering temperature and additional performance improvements, as long as the additive was supplemented in proper weight percent. Nevertheless, excessive additives deteriorated the microstructures of ZST samples, resulting in the decrease of dielectric properties. In this work, the phase contents, microstructures, sintered densities, dielectric performances, and sintering characteristics of ZST specimens were comprehensively studied. A near-zero (f) = -3.69 ppm degrees C-1 associated with optimal dielectric performances of epsilon(r)=40.08, Qxf=42600GHz (f=5.54GHz) was achieved for doped specimen with 0.25wt% La2O3+0.25wt% CBS additions sintered at 1280 degrees C for 4h.
引用
收藏
页码:5194 / 5202
页数:9
相关论文
共 50 条
  • [1] Synthesis and low temperature densification of (Zr0.8Sn0.2)TiO4 ceramics with improved dielectric properties
    Liming Zhang
    Wenyuan Gong
    Miao Xin
    Yi Chang
    Xianfu Luo
    Hongqing Zhou
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 5194 - 5202
  • [2] Low temperature processing of (Zr0.8Sn0.2)TiO4 ceramics with improved Q factor
    Pamu, D.
    Rao, G. Lakshmi Narayana
    Raju, K. C. James
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (38) : 9289 - 9295
  • [3] The synthesis, characterization and properties of Hf-substituted (Zr0.8Sn0.2)TiO4 dielectric ceramics
    Sreemoolanadhan, H
    Ratheesh, R
    Sebastian, MT
    Rodrigues, N
    Philip, J
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1997, 30 (12) : 1809 - 1814
  • [4] Preparation and dielectric properties of low-temperature-sinterable (Zr0.8Sn0.2)TiO4 powder
    Han, KR
    Jang, JW
    Cho, SY
    Jeong, DY
    Hong, KS
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1998, 81 (05) : 1209 - 1214
  • [5] Effect of Sintering Methods on Properties of (Zr0.8Sn0.2)TiO4(ZST) Dielectric Ceramics
    Yang Xuejiao
    Li Yuping
    Gao Pengzhao
    Li Rongzheng
    Chen Gongtian
    RARE METAL MATERIALS AND ENGINEERING, 2009, 38 : 659 - 662
  • [6] MICROWAVE DIELECTRIC-PROPERTIES OF (ZR0.8SN0.2)TIO4 CERAMICS WITH PENTAVALENT ADDITIVES
    YOON, KH
    KIM, YS
    KIM, ES
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (08) : 2085 - 2090
  • [7] Microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics doped with WO3
    Ahn, YS
    Yoon, KH
    Kim, ES
    FERROELECTRICS, 2001, 257 (1-4) : 123 - 128
  • [8] MICROSTRUCTURE AND DIELECTRIC QUALITY FOR MN-DOPED (ZR0.8SN0.2)TIO4 CERAMICS
    FANG, Y
    XU, Z
    HU, A
    PAYNE, DA
    FERROELECTRICS, 1992, 135 (1-4) : 139 - 146
  • [9] Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics with additives
    Kim, Woo Sup
    Kim, Tae Hong
    Kim, Eung Soo
    Yoon, Ki Hyun
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (9 B): : 5367 - 5371
  • [10] Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics with additives
    Kim, WS
    Kim, TH
    Kim, ES
    Yoon, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B): : 5367 - 5371