Dislocation Revelation from (000(1)over-bar) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

被引：15

作者：

Yao, Yong-Zhao ^{[1
]}

Ishikawa, Yukari ^{[1
]}

Sato, Koji ^{[1
]}

Sugawara, Yoshihiro ^{[1
]}

Danno, Katsunori ^{[2
]}

Suzuki, Hiroshi ^{[2
]}

Bessho, Takeshi ^{[2
]}

机构：

[1] JFCC, Nagoya, Aichi 4568587, Japan

[2] Toyota Motor Co Ltd, Shizuoka 4101193, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 07期

关键词：

SIC SINGLE-CRYSTALS;

D O I：

10.1143/APEX.5.075601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel etching technique using vaporized KOH to reveal various types of dislocations from the C-face of 4H-SiC has been proposed. Three different pit geometries have been observed, which can be attributed to three dislocation types commonly found in 4H-SiC. Pit positions on the Si-face and C-face have been compared to study the dislocation propagation behaviors across the sample thickness. Activation energy EA 49 kcal/mol has been obtained, indicating a surface-reaction-dominant process. This etching technique has provided an effective and inexpensive method of making inch-scale mapping of dislocation distribution for C-face epitaxial and bulky 4H-SiC. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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