A Wideband Microstrip-to-Waveguide Transition Using E-Plane Probe with Parasitic Patch for W-Band Application

被引:1
|
作者
Han, Min [1 ]
Wang, Chengzhi [2 ]
Liu, Chao [1 ]
Xiao, Shuwen [1 ]
Ma, Jianguang [1 ]
Sun, Hui [1 ]
机构
[1] Acad Mil Sci, Inst Syst Engn, Beijing 100082, Peoples R China
[2] Natl Innovat Inst Def Technol, Acad Mil Sci, Beijing 100082, Peoples R China
来源
APPLIED SCIENCES-BASEL | 2022年 / 12卷 / 23期
基金
中国国家自然科学基金;
关键词
E-plane probe; microstrip-to-waveguide transition; parasitic patch; ARRAY;
D O I
10.3390/app122312162
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The hollow metal waveguides are attractive components for millimeter-wave circuits owing to low loss. To integrate with the front-end circuit, a transition from microstrip line to waveguide is required. In this article, a microstrip-to-waveguide transition is presented in the W-band by using an E-plane probe with a parasitic patch. The probe is embedded into the waveguide along the center of the broad wall to excite the TE10 mode. A backshort-circuited waveguide with a quarter wavelength is used to obtain sufficient energy coupling and achieve good impedance matching. The additional parasitic patch can introduce a new resonance at a low frequency to enhance the working bandwidth. Hence, the proposed transition achieves wide working bandwidth and low insertion loss. For verification, a back-to-back transition is constructed and measured. The measured results indicate that the proposed transition has a wide working bandwidth covering the entire W-band. The measured reflection coefficient is below -13 dB from 70 to 110 GHz and the average insert loss is 1.1 dB. Attributed to wide working bandwidth and simple structure, the proposed transition is attractive for W-band circuit systems.
引用
收藏
页数:10
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